| 摘要 |
PURPOSE:To lower a threshold value, and to increase an output by forming cathode layers having the same conductivity type as the lower clad of an active layer and forbidden band width larger than the active layer onto both surfaces of a stripe with the active layer. CONSTITUTION:An InGaAsP active layer 1, an n-InP clad layer 2 and a p-InP clad layer 3 shape double heterogeneous junction structure, and an n-InP cathode layer 4, a p-InP first gate layer 5, an n-InP second gate layer 6 and a p-InP anode layer 7 form thyristor structure. Currents constricted by thyristor structure are injected to the active layer or the cathode layer in a thyristor. Consequently, the gate currents of the thyristor are brought to zero, thus generating no lower ing of external quantum efficiency due to a change into an ON state of the thyristor even under the state of the injection of high currents. Since p-n junction potential larger than the diffusion potential of an active-layer p-n junction is shaped in active-layer both side cathode layers, peripheral leakage is reduced, and threshold currents are decreased.
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