| 发明名称 |
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING SEMICONDUCTOR DEVICE |
| 摘要 |
A semiconductor device includes: a semiconductor substrate; a wiring layer provided on a front-surface side of the semiconductor substrate; a through-via that penetrates through the semiconductor substrate from a back-surface side of the semiconductor substrate and is coupled to a wire included in the wiring layer; and a stress relaxation part that protrudes toward a through-via side and is disposed on a section in the wire and coupled to the through-via, the stress relaxation part including at least one insulating portion containing an insulating material having a smaller thermal expansion coefficient than a material of the through-via. |
| 申请公布号 |
US2016351474(A1) |
申请公布日期 |
2016.12.01 |
| 申请号 |
US201615081433 |
申请日期 |
2016.03.25 |
| 申请人 |
FUJITSU LIMITED |
发明人 |
Dote Aki;ISHITSUKA Takeshi;Kitada Hideki |
| 分类号 |
H01L23/48;H01L23/528;H01L21/31;H01L21/768;H01L21/8234;H01L29/06;H01L23/00 |
主分类号 |
H01L23/48 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device comprising:
a semiconductor substrate; a wiring layer provided on a front-surface side of the semiconductor substrate; a through-via that penetrates through the semiconductor substrate from a back-surface side of the semiconductor substrate and is coupled to a wire included in the wiring layer; and a stress relaxation part that protrudes toward a through-via side and is disposed on a section in the wire and coupled to the through-via, the stress relaxation part including at least one insulating portion containing an insulating material having a smaller thermal expansion coefficient than a material of the through-via. |
| 地址 |
Kawasaki-shi JP |
