发明名称 SEMICONDUCTOR PRESSURE SENSOR
摘要 PURPOSE:To improve sensibility by forming the central section and end side section of a pressure sensitive element in thick sections, shaping sections except said central section and end side section in second thin sections and arranging the central section of the pressure sensitive element onto the upper surface of a first thin section in a pedestal. CONSTITUTION:With a pressure sensitive element 3, a central section 3b and end side sections 3c are formed in thick sections, sections except said central section and end side sections are shaped in second thin sections 3a, and the central section 3b of at least the pressure sensitive element 3 is disposed onto the upper surface of a first thin section 1a in a pedestal 1. That is, since pressure P applied from a pressure introducing hole 1b deflects the thin section 1a in the pedestal 1 and displaces the thick section 3b of the central section of the pressure sensitive element 3, stress is generated in gages 4, and a resistance value changes in response to the stress, thus sensing pressure. Accordingly, sensibility is improved because the thin sections 3a are formed to the pressure sensitive element 3 even when the thin section 1a in the pedestal 1 is not thinned, and strength is increased and workability is also enhanced because the thickness of the peripheral sections 3c of the pressure sensitive element 3 is thickened.
申请公布号 JPS63217671(A) 申请公布日期 1988.09.09
申请号 JP19870051095 申请日期 1987.03.05
申请人 NIPPON DENSO CO LTD 发明人 KATOU YUKIHIRO
分类号 H01L29/84;G01L9/00;G01L9/04 主分类号 H01L29/84
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