发明名称 MANUFACTURE OF SEMICONDUCTOR TYPE GAS SENSOR
摘要 PURPOSE:To suppress lowly a variance of a heater resistance, and to always obtain a correct gas sensitive characteristic by embedding a heater formed in advance into an insulating substrate, providing an insulating layer thereon, and providing a pair of electrodes and a gas sensitive body on its insulating layer. CONSTITUTION:By raising its dimension accuracy, a variance of a resistance value of the heater 15 formed in advance, can be suppressed lowly. In such a way, stabilization of a heating temperature of an insulating substrate can be contrived, and accordingly, a correct gas sensitive characteristic can always be obtained, and a correct gas detection can be executed. Also, since the heater 15 is formed so as to be embedded into a bottom plate 14a of the insulating substrate, the disconnection due to thermal expansion, the disconnection due to corrosion, and also, a heater detachment, etc. can be prevented, the durability also goes to excellent, and the reliability can be improved.
申请公布号 JPS63223553(A) 申请公布日期 1988.09.19
申请号 JP19870056758 申请日期 1987.03.13
申请人 OSAKA GAS CO LTD;TOSHIBA CORP 发明人 MATSUZAKA TAKASHI;SHIRATORI MASAYUKI;OKAZAKI HIROTERU;IPPONMATSU MASAMICHI
分类号 G01N27/12 主分类号 G01N27/12
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