| 摘要 |
PURPOSE:To permit measurement of the depth of a narrow and deep groove by embedding a material into the groove, projecting light thereon from above said material and measuring the light which is reflected from the base of the groove and returns to the surface while interfering in the material, thereby measuring the thickness of the embedded material. CONSTITUTION:The groove 14 is formed atop a semiconductor substrate 10. A photoresist film or water soluble polymer film or the like is then coated thereon as a material 20 by using a spin coating method. The film thicknesses of the material 20 in the groove part (a) and the surface part (b) near the groove are thereafter measured by using a film thickness measuring gage which makes measurement by a light interference method from the front surface. The groove depth is measured from the difference therebetween. The material 20 is removed by a soln. of H2SO4 or HNO3 or dry etching in O2 plasma if said material is a photoresist film. The material is removed by pure water if it is a water soluble polymer.
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