| 摘要 |
PURPOSE:To increase the area of a memory capacitor region and augment the charge capacity, by forming a mountain part at the bottom surface of a hole formed in the memory capacitor region. CONSTITUTION:In a memory capacitor region 16, a hole 17 is formed and further a mountain part 18 is formed at the bottom surface of the hole 17. The hole 17 having such a mountain part 18 can be obtained by a suitable etching treatment. By the effect of the mountain part 18 formed at the bottom surface of the hole 17, the area of the memory capacitor region 16 is fairly increased. The higher the mountain part 18 is made, the larger the area of the memory capacitor region 16 becomes. Thereby, the capacity of a semiconductor memory can be still more increased. |
