发明名称 HEAT TREATMENT DEVICE FOR SEMICONDUCTOR WAFER
摘要 PURPOSE:To suppress the influence of the heat generated by the combustion of hydrogen and oxygen on the temperature atmosphere in a processing tube by a method wherein a heat-retaining heater part is provided adjoining to the heat-insulated part at the entrance of a furnace, and hydrogen and oxygen are burned in this region. CONSTITUTION:Heater wires 11a and 11a are embedded in the heat-insulating moldings 10a located adjoining to a heat-insulated part at the opening of a furnace, a heat-retaining heater part 2, with which temperature is controlled at a fixed temperature, namely, the ignition point of about 580 deg.C or above, is provided adjoining to a heat-insulated part at the entrance of a furnace. Temperature is controlled by providing the heat-insulating moldings 10a at the part adjoining to the rear of the furnace entrance heat-insulating part 3, the non-uniformity of the temperature atmosphere in a processing tube 4 can be suppressed to the minimum by burning hydrogen and oxygen inside the heat-insulating molded bodies, and the temperature variation of the zone III can be reduced. As a result, the stability of the temperature when hydrogen and oxygen are burned in a heat-treatment furnace can be improved, and the control of temperature can also be made easy.
申请公布号 JPS63263730(A) 申请公布日期 1988.10.31
申请号 JP19870100505 申请日期 1987.04.22
申请人 NEC CORP 发明人 MIYOSHI HIDEKAZU
分类号 H01L21/31;H01L21/22;H01L21/316 主分类号 H01L21/31
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