| 摘要 |
PURPOSE:To enable selective growth only in a desired region, by providing a specific desired region having an orientation different from that of other regions on the surface of a substrate in growing a laminated structure consisting of GaAs and InAs on a GaAs substrate. CONSTITUTION:For example, a stripy mask is formed in the direction (A) on the surface (100) of a GaAs substrate 1 and the substrate 1 is then etched with a sulfuric acid based solution. Thereby parts other than the masked parts are the surface (111) (or B). The resultant processed substrate 1 is placed in an ultrahigh-vacuum vessel and irradiated with molecular beams of In and As4 (or As2) to grow InAs 2 on the surface (100) of the substrate. At this time, InAs will not grow on the surface (111) (or B). When In is replaced by Ga while irradiating the substrate with the molecular beams, GaAs 3 is grown on the whole surface of the substrate. The afore-mentioned steps can be repeated to grow a laminated structure 4 of InAs and GaAs only on the surface (100).
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