| 摘要 |
PURPOSE:To previously prevent a semiconductor substrate in case of mounting from being damaged by a method wherein the rear side on the peripheral part of a via hole on the rear side of semiconductor layer is coated with a material not to be adapted to a solder-brazing material. CONSTITUTION:Upper electrodes 6, 7 are formed respectively in contact with ohmic electrodes 4, 5 of source.drain on a substrate 1, a gate electrode 3 is covered with an insulating protective film 8 to constitute a GaAs FET. Next, a hole in taper section to be a via hole 9 is made from the rear side of the substrate 1 in the part opposing to the source upper electrode 6, a gold plated layer 10 is formed on the inner wall of the via hole 9 and the rear side of the substrate 1 to be electrically connected to the source upper electrode 6 in the via hole 9. Finally, a metallic films not to be adapted to solder brazing materials 2 such as Ti or TiN etc., and insulation layer 13 such as SiO2, SiN are provided on the surface of the gold plated layer 10 on the peripheral part of the via hole 9.
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