| 发明名称 |
Method of controlling the order-disorder state in a semiconductor device |
| 摘要 |
An ordered-disordered transition is observed in semiconductor alloys which enables either the ordered or disordered structure to be produced.
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| 申请公布号 |
US4879256(A) |
申请公布日期 |
1989.11.07 |
| 申请号 |
US19890331063 |
申请日期 |
1989.03.28 |
| 申请人 |
AT&T BELL LABORATORIES |
发明人 |
BEAN, JOHN C.;OURMAZD, ABBAS |
| 分类号 |
G11C16/02;H01L27/146;H01L29/15;H01L29/80 |
主分类号 |
G11C16/02 |
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