| 摘要 |
A semiconductor device (100), wherein the inter-diepad filling sections (8c, 8d) and the thin-walled section (8b) that covers the entirety of the heat-dissipating surface (2b) of the lead frame (2) are integrally formed by a second mold resin (8), so the inter-diepad filling sections (8c, 8d) are in close contact with the side surface of the lead frame (2), thereby improving the adhesion between the thin-walled section (8b) and the lead frame (2). In addition, the thin-walled section (8b) is made partially thicker by means of the inter-diepad filling sections (8c, 8d), thereby improving the strength of the thin-walled section (8b), and improving resistance to chipping and cracking. |
