| 摘要 |
PURPOSE:To avert the generation of cracks and to improve the yield of production by shielding the outside peripheral part of a wafer from light and subjecting the wafer to irradiation of light to resist patterns by using the light irradiation device having a diaphragm. CONSTITUTION:The surface of the wafer 1 is irradiated with irradiation light 8 and the region of the resist patterns on one surface of the wafer 1 opposite to the aperture of the diaphragm 12 constitutes a light irradiation region 13 and the part subjected to light shielding by the diaphragm 12 constitutes a light shielding region 14 when a shutter 9 is opened. The surface of the irradiated part 13 of the resist patterns is cured by the photopolymn. reaction by the irradiation light but the photopolymn. reaction does not take place in the light shielded part 14. The cracking of the resist patterns formed in the outside peripheral part of the wafer 2 is prevented in this way and the damaging of stripping of the resist patterns formed in the outside peripheral part of the wafer 1 is prevented even when the wafer receives the impact force by contact in handling to be included in the later stage. |
