| 摘要 |
In an X-ray detecting device, a plurality of scintillator elements are arranged and assembled in a array which is located on a semiconductor structure. In a semiconductor structure, a plurality of photo-detecting structures are formed in a substrate and are arranged in an array corresponding to the scintillator element array. A trap region is formed in an intermediate region of the substrate surface between the adjacent photo-detecting structures so that an electrical signal which is produced in the intermediate region by light rays generated in the scintillator element is trapped in the trapped region.
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