发明名称 |
Sensing detection circuit in dynamic random access memory |
摘要 |
A sensing detection circuit in a DRAM detects the sensing of data in a memory array. The circuit reduces the sensing access time significantly by detecting an output produced upon completion of the data sensing in the memory array which output is used to immediately initiate the next date operation without unnecessary delay.
|
申请公布号 |
US4959814(A) |
申请公布日期 |
1990.09.25 |
申请号 |
US19880290991 |
申请日期 |
1988.12.28 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
CHO, SOO I.;CHOI, SI D. |
分类号 |
G11C11/407;G11C11/409 |
主分类号 |
G11C11/407 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|