| 摘要 |
The method for forming a high quality polycrystal filicon film is characterized by forming an amorphous silicon, ion- implanting it with boron- and phosphorus- contg. impurities, and rapidly heat-treating it at 1000 deg.C or more. The polycrystal silicon film is formed by minimize the temperature influence and the impurity redistribution in the substrate, and hillock generation. The film is used in the manufacture of microelectronics devices.
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