发明名称 |
SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF |
摘要 |
PURPOSE:To flatten a surface of an interlayer insulating film for insulator- isolating upper and lower layer wirings. CONSTITUTION:A lower interconnection layer 6 is provided as a rugged pattern on a semiconductor substrate 1. A silicon series insulating film 7 is so provided on the substrate as to cover the layer 6. A silicon ladder resin film 8 for flattening the surface of the insulting film is buried in a recess of the surface of the film 7. An upper wiring layer 22 to be electrically insulated from the lower wiring layer is provided on the film 8 through a viahole 7C. The constituent group of the film 8 is phenyl group or lower alkyl group and hydrogen atom or lower alkyl group. |
申请公布号 |
JPH05190684(A) |
申请公布日期 |
1993.07.30 |
申请号 |
JP19920005928 |
申请日期 |
1992.01.16 |
申请人 |
MITSUBISHI ELECTRIC CORP |
发明人 |
ADACHI HIROSHI;KANEGAE YUZO;MOCHIZUKI HIROSHI;OBATA MASANORI;ENDOU TOSHIMI;HAGI KIMIO;HARADA SHIGERU;MATSUKAWA KAZUTO;DAIHISA AKIRA;ADACHI ETSUSHI |
分类号 |
H01L21/3205;H01L21/3105;H01L21/312;H01L21/768;H01L23/522;H01L23/532 |
主分类号 |
H01L21/3205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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