| 发明名称 |
VERFAHREN ZUR HERSTELLUNG VON DIAMANTKRISTALL. |
| 摘要 |
The steady state operating parameters of a low pressure chemical vapor deposition process for making diamond, i.e., nucleation-growth and graphite removal, are applied as controlled sequential steps to favor nucleation and growth. |
| 申请公布号 |
DE68909491(D1) |
申请公布日期 |
1993.11.04 |
| 申请号 |
DE1989609491 |
申请日期 |
1989.04.21 |
| 申请人 |
GENERAL ELECTRIC CO., SCHENECTADY, N.Y., US |
发明人 |
GASWORTH, STEVEN MARC, SCOTIA NEW YORK 12302, US |
| 分类号 |
C30B29/04;C30B25/00;C30B25/14 |
主分类号 |
C30B29/04 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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