发明名称 THIN-FILM TRANSISTOR ARRAY
摘要 <p>PURPOSE:To prevent the removal of the management symbol patterns of the thin-film transistor(TFT) array together with a chromium film for forming source electrodes and drain electrodes at the time of etching this chromium film by coating the management symbol patterns with a gate insulating film. CONSTITUTION:The TFTs and transparent pixel electrodes are formed on the lower transparent glass substrate SUBI side of an active liquid crystal display panel. A management number display region A is formed on a Cr conductive film g1. The type number, lot number, serial number, etc., of the liquid crystal panel are plotted to a photoresist RST by utilizing an X-Y plotter. The management symbol patterns are displayed by etching this resist. This management number display region A is coated with a gate insulating film G1 and a SIN protective film PSVI and, therefore, the removal of the management symbol patterns does not arise at the time of etching the Cr conductive layer in the stage for production of source and drain electrodes.</p>
申请公布号 JPH06102534(A) 申请公布日期 1994.04.15
申请号 JP19920250964 申请日期 1992.09.21
申请人 HITACHI LTD 发明人 SUZUKI MASAHIKO;SHODA KATSUHIKO;KUNITO HIROBUMI;KIKUMOTO ATSUSHI
分类号 G02F1/136;G02F1/13;G02F1/1333;G02F1/1368;H01L21/336;H01L29/78;H01L29/786;(IPC1-7):G02F1/136;H01L29/784 主分类号 G02F1/136
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