| 摘要 |
PURPOSE:To realize a quantum well with a low voltage applied to an electrode and a low consumption power, by using a very thin silicon layer and a very thin oxide film layer of an SOI substrate. CONSTITUTION:A silicon substrate 1, a silicon oxide film layer 2, and a thin film silicon layer 3 are unified in a body to constitute an SOI(silicon on insulator) structure substrate. The silicon oxide film layer 2 is a thin film layer of about 300nm in thickness. The thin film silicon layer 3 is a thin film layer of about 100nm in thickness. A high concentration impurity diffusion region 4, a back gate electrode 5, a control gate 6, and a control gate 15 are formed, thereby obtaining a quantum well structure. A positive voltage is applied to the back gate electrode, and a negative voltage is applied to a control gate electrode 15. Thereby a quantum well structure of one dimensional electron gas 30 of 100-30nm in width can be formed. |
