| 摘要 |
<p>PURPOSE:To provide a semiconductor device wherein the influence of the variation in a film thickness of a protective film formed on a thin-film resistor can be reduced in laser trimming of the thin-film resistor formed on a substrate. CONSTITUTION:A base oxide film 5 constituted of a BPSG film and a silicon oxide film is formed on an Si substrate 6 and then a thin-film resistor 4 is formed on the base oxide film 5. On the thin-film resistor 4, a silicon oxide film 3, a silicon nitride film 2 and another silicon oxide film 1 are formed as protective films for the thin-film resistor. With the silicon oxide film 1, the fluctuation of a laser light energy absorptivity of the thin-film resistor 4 due to the variation of a film thickness of the silicon nitride film can be held down and thereby a resistance value of the thin-film resistor can be controlled stably with laser light.</p> |
