| 摘要 |
<p>PURPOSE: To manufacture a rigid piezoelectric layer having a specified thickness, by causing a PZT layer on a carrier to contain a simply modified PZT and a PZT of composite ash titanium stone, determining the Zr content of the PZT in accordance with specified conditions, and using the Zr content of a basic structure on a similar phase boundary. CONSTITUTION: A PZT layer produced by a carrier thick film forming technique contains a simply modified PZT and a composite ash titanium stone. The Zr content X of the PZT is set to X>=Xp+0.02<=Xp+0.10. In this case, Xp is determined by the maximum value of Kr, and the Zr content of a basic structure on a similar phase boundary is used. Thus, a rigid piezoelectric layer having a thickness up to approximately 300μm can be manufactured.</p> |
