| 摘要 |
PURPOSE:To provide a method of manufacturing a semiconductor device capable of improving alignment precision, and aligning a pattern formed on an upper layer film and a pattern formed on a lower layer film, with a small mask alignment margin. CONSTITUTION:Marks 42a, 42c are formed in an active process, marks 42b, 42d are formed in a gate poly process, and an alignment mark 42 is formed. On the basis of the alignment mark 42, the well-known image processing and treatment using laser reflection light are performed. Then the alignment of a pattern of a polycrystalline Si film 12 and a pattern of a contact hole 14 is performed. |
