| 摘要 |
<p>PURPOSE: To obtain a formation method in which a swelling is not generated, which comprises a surface reaction process for an easy stripping operation after a process, in which the number of processes is reduced and in which the production costs of a device are reduced. CONSTITUTION: A silicon oxide film 12 is formed on a silicon substrate 11, and a tungsten film 13 is laminated additionally. A polygermane film 14 is deposited on the substrate, to be worked, by a plasme CVD(chemical vapor deposition) method in which trimethylgermane [(CH3 )3 GeH] is used as a source gas. Then, a step-and-repeat exposure operation is performed by using an ArF excimer laser in an oxygen atmosphere, and a latent image is formed in such a way that the polygermane film 14 is optically pumped and oxidized into a polygelmiloxane film 15. Then, by a plasma etching operation which uses a mixed gas of chlorine and oxygen, the polygermane film 14 and the tungsten film 13 are etched continuously in this order, and a tungsten pattern 16 is obtained. Then, the polygelmiloxane film 15 which is left on the tungsten pattern 16 is immersed in fuming nitric acid so as to be dissolved and removed.</p> |
