SEMICONDUCTOR DEVICE SILICON WIRE MANUFACTURING METHOD

摘要

forming a silicon layer(24) on the surface of a bottom insulator(22) having a step formed on a semiconductor substrate; forming a photoresist pattern(26) for forming a wire by separating the silicon layer(24) to reveal the silicon layer around the step; injecting oxygen ions into the silicon layer revealed by the photoresist pattern(26); and separating the silicon wire by forming an oxide film(30) by a thermal oxidation of the silicon layer(24) injected with the oxygen ions, after removing the photoresist pattern(26).