SEMICONDUCTOR METAL WIRE FORMING METHOD

摘要

The method is to form a metal wire(6) planarized with the first and the second aluminum alloy layer(6a,6b) by depositing and planarizing the second aluminum alloy layer(6b) at the high temperature of 400 - 550deg.C by increasing the temperature by flowing Ar gas into an aluminum deposition chamber, after depositing the first aluminum alloy layer(6a) at the low temperature of 50 - 100 deg.C without flowing Ar gas into the aluminum deposition chamber by moving a wafer from a sputtering apparatus into the aluminum deposition chamber in the state of high temperature and high vacuum without an exposure to the atmosphere after depositing a Ti layer(5).