| 摘要 |
<p>A work is etched by supplying oxygen and carbon to the work such that the ratio of the number of oxygen atoms to the number of carbon atoms become 0.1 or less and controlling the deposition of a protective film and etching. This results in the reduction of side etching in a wiring process and enables a minuter wiring process with high dimension accuracy even if a resist selection rate is increased.</p> |
