HIGH ELECTRON MOBILITY TRANSISTOR (HEMT) AND A METHOD OF FORMING THE SAME

摘要

A high electron mobility transistor (HEMT) made of nitride semiconductor materials, and a method to form the HEMT are disclosed. The HEMT includes a channel layer made of GaN, a barrier layer made of one of AlGaN, InAlN, and InAlGaN on the GaN channel layer, a cap layer made of n-type GaN on the barrier layer, and an insulating layer on the cap layer. The insulating layer has an opening into which the gate is formed. The cap layer has a thickness in the portion of the opening smaller than a thickness of portions of the cap layer except for the opening, which is preferably 5 nm at most.

主权项

1. A high electron mobility transistor (HEMT), comprising:
a channel layer made of gallium nitride (GaN); a barrier layer provided on the channel layer, the barrier layer being made of one of aluminum gallium nitride (AlGaN), indium aluminum nitride (InAlN), and indium aluminum gallium nitride (InAlGaN); a cap layer provided on the barrier layer, the cap layer being made of gallium nitride (GaN); and an insulating layer provided on the cap layer, the insulating layer having an opening into which a gate is formed, wherein the cap layer provides a rest region within the opening in the insulating layer, the rest region having a thickness smaller than a thickness of portions outside of the rest region whose thickness is 5 nm at most.