COMPOSITION OF MATERIAL OF MEMORY DEVICE, METHOD OF MANUFACTURING THEREOF, ENERGY-DEPENDENT MEMORY DEVICE, METHOD OF MANUFACTURING THEREOF, METHOD OF MEMORIZING AND REPRODUCING TWO INDEPENDENT BITS OF BINARY DATA IN ONE MEMORY CELL OF ENERGY-DEPENDENT MEMORY DEVICE

摘要

FIELD: memory devices. SUBSTANCE: invention provides composition possessing ferromagnetic, piezoelectric, and electrooptic properties. In a preferred embodiment of invention, composition of materials (310 and 350) contains first layer Pb(1-x-y)CdxSiy, second layer Se(1-2)Sz, and third layer Fe(1-wCrw, where x, y, z, and w are values varying, respectively, within the following ranges: 0.09-0.11, 0.09-0.11, 0.09-0.11, and 0.18-0.30. In addition, each layer contains at least one of the following elements: Ag, Bi, O, and N. Energy-dependent random-access memory device is constructed from above-listed material composition. This device is designed to memorize two independent bits of binary information in one memory cell. Each cell contains two orthogonal address buses formed on opposite surfaces of silicon substrate, and, above each of address buses (340 and 320), composition of materials is formed in conformity with present invention. Above each composition of materials, electrode is formed. Information is memorized via electromagnetic route and is reproduced by means of piezoelectric voltage. EFFECT: increased operation speed and reduced power consumption. 66 cl, 27 dwg