| 摘要 |
PROBLEM TO BE SOLVED: To obtain a gallium nitride-based compound semiconductor light- emitting element, the operating voltage of which can be lowered further and the luminous output of which can be increased and which is optimum for an outdoor display device, etc. SOLUTION: A gallium nitride-based compound semiconductor light-emitting element is formed by laminating an n-type clad layer 3, a light-emitting layer 4, and a p-type clad layer 4 all of which are composed of gallium nitride compound semiconductors upon another on a substrate 1 in this order and changing the compositional distribution in the thickness direction in the clad layer 4 at a substantially uniform or discontinuous rate of change, so that the forbidden band width converges in the direction in which the distance from the light- emitting layer 4 becomes farther apart. |
