| 摘要 |
The concentration of the Si30 isotope is increased prior to irradiation, which is carried out in the presence of heavy water as a moderator located between the neutron source/reactor and the silicon carbide material. A method for n-doping silicon carbide by neutron irradation, comprises exposing the silicon carbide to the neutron radiation in areas where the concentration of the Si30 isotope has been increased from a normal value of ca. 3 % to a higher value, preferably greater than or equal to 90 %. Neutron irradiation is carried out whilst modifying the neutron field by introducing a moderator comprising heavy water between the neutron source/reactor and the silicon carbide material. Independent claims are also included for: (a) the use of the doped silicon carbide for making semiconductor components, e.g. diodes or thyristors, and (b) semiconductor components made from the doped silicon carbide. |
