发明名称 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor device at a low cost and its manufacturing method for reducing stress caused by the difference in coefficient of thermal expansion with a mounting substrate surely. SOLUTION: A semiconductor device includes an electrode part 2 on a semiconductor element 1, a wiring layer 6 connected to the electrode part 2 via an insulating layer 4, and a package electrode 7 formed on the wiring layer 6. A conductive member 8 made of alloy with martensitic transformation is placed party in a conductive path from the wiring layer 6 to the package electrode 7 to absorb stress caused in the conductive path. In this way, a semiconductor device with reliability in connection, superior electrical characteristics and suitability in high-density mounting can be obtained at a low cost. As a result, the semiconductor device can be connected with a wiring board, using solder to complete high-performance electronic apparatus.
申请公布号 JP2001024021(A) 申请公布日期 2001.01.26
申请号 JP19990195917 申请日期 1999.07.09
申请人 HITACHI LTD 发明人 YAMAGUCHI YOSHIHIDE;TENMYO HIROYUKI;NARIZUKA YASUNORI;ITO MITSUKO
分类号 H01L23/52;H01L21/3205;H01L21/60 主分类号 H01L23/52
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