Image sensor and electronic device including the same

摘要

Example embodiments relate to an image sensor that includes a semiconductor substrate integrated with at least one photo-sensing device, an impurity-doped first light-transmitting electrode present in the semiconductor substrate, an organic photoelectric conversion layer positioned on one side of the semiconductor substrate and absorbing light in a different wavelength from the wavelength sensed by the photo-sensing device, and a second light-transmitting electrode positioned on one side of the organic photoelectric conversion layer, and an electronic device including the same.

主权项

1. An image sensor comprising:
a semiconductor substrate including at least one photo-sensing device configured to sense a wavelength; an impurity-doped first light-transmitting electrode in the semiconductor substrate; an organic photoelectric conversion layer on the semiconductor substrate and configured to absorb light in a different wavelength from the wavelength sensed by the photo-sensing device; and a second light-transmitting electrode on the organic photoelectric conversion layer; wherein the impurity-doped first light-transmitting electrode, the organic photoelectric conversion layer, and the second light-transmitting electrode form an organic photoelectric device, and one of the impurity-doped first light-transmitting electrode and the second light-transmitting electrode is an anode of the organic photoelectric device, and the other of the impurity-doped first light-transmitting electrode and the second light-transmitting electrode is a cathode of the organic photoelectric device.