| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a laser element comprising a nitride semiconductor which has a simple structure, where a threshold current is smaller while continuous oscillation is allowed at a room temperature. SOLUTION: On a substrate, an n-type contact layer comprising an n-type nitride semiconductor layer represented with AlyGa1-yN (0<y<1), an active layer of multiplex quantum well structure comprising a nitride semiconductor containing In, and a first p-type layer, comprising p-type nitride semiconductor containing Al are sequentially provided. Furthermore, a second p-type layer comprising p-type nitride semiconductor or p-type GaN, which contains In, is provided between the active layer and the first p-type layer, and a third p-type layer comprising a nitride semiconductor containing Al, whose film thickness is thinner than the first p-type layer, is provided between the active layer and the second p-type layer.</p> |
