发明名称 METHOD FOR TRANSPORTING SEMICONDUCTOR DEVICE AND METHOD FOR SELECTING TRANSPORTATION PATH OF SEMICONDUCTOR DEVICE
摘要 <p>PROBLEM TO BE SOLVED: To suppress the generation of a subsequent fault in the transportation of a semiconductor device. SOLUTION: By this transporting method for the semiconductor, the semiconductor device is transported from a starting point to a destination by using the transportation path B1+B2 having the smallest cosmic-ray density between plural transportation paths A and B1+B2 from the starting point to the destination. This method has a stage for inputting the starting point and destination of the transportation of the semiconductor, a stage for calculating the transportation paths A and B1+B2 from the starting point to the destination, a stage for calculating the comic-ray density values in the transportation paths A and B1+B2, and a stage for selecting the transportation path having the smallest cosmic-ray density between the transportation paths A and B1+B2.</p>
申请公布号 JP2001250188(A) 申请公布日期 2001.09.14
申请号 JP20000059848 申请日期 2000.03.06
申请人 SONY CORP 发明人 SHOJI HIROSHI
分类号 G01T1/00;B65G49/07;G05B19/418;G06F7/00;G08G1/00;G08G5/00;H01L21/26;H01L21/324;H01L21/42;H01L21/477;H01L21/50;(IPC1-7):G08G1/00 主分类号 G01T1/00
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