| 摘要 |
PROBLEM TO BE SOLVED: To provide an optical semiconductor device having sufficient heat radiation characteristics where an LED chip is subjected to flip-chip bonding. SOLUTION: In this optical semiconductor device, a light-emitting device chip having an n-type gallium nitride semiconductor layer, a p-type gallium nitride semiconductor layer that is formed on the n-type gallium nitride semiconductor layer via a luminous layer, a p-electrode that is formed on the p-type gallium nitride semiconductor layer, and a p-pad electrode that is formed at one portion of the p-electrode; and a substrate having positive and negative electrodes; are provided on a substrate. The positive electrode of the substrate and the p-pad electrode of the light-emitting device chip, and the negative electrode of the substrate and the n-electrode of the light-emitting device chip, are joined via a conductive adhesive agent each other. In the optical semiconductor device, the p-electrode of the light-emitting device chip and the positive electrode of the substrate oppose each other via an insulating film, and a joint agent is filled between the insulating film on the p-electrode and the positive electrode so that heat can be transferred between the p-electrode and the positive electrode that face each other. |
