METHOD FOR FABRICATING METAL INTERCONNECTION OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for fabricating a metal interconnection of a semiconductor device is provided to make the metal interconnection have resistance of 300 micro ohms or lower, by depositing a Ta-Si-N layer as a diffusion barrier layer of copper and by forming a metal contact and a metal line pattern through a dual damascene process. CONSTITUTION: A semiconductor substrate(10) for performing a metal interconnection process is prepared. An insulation layer(12) is formed on the semiconductor substrate and a contact hole is formed in a predetermined portion of the insulation layer. A tantalum-silicon layer(14) is formed on the semiconductor substrate and the contact hole. A tantalum-silicon-nitrogen layer(16) is formed on the tantalum-silicon layer including the contact hole. A copper metal layer is formed inside the contact hole having the tantalum-silicon-nitrogen layer and is planarized. A cap metal layer(20) is formed on the resultant structure including the planarized copper metal layer. A patterning process and an etch process are performed on the cap metal layer to form the metal interconnection.