| 发明名称 |
Semiconductor device and circuit with dynamic control of electric field |
| 摘要 |
A circuit, comprising a semiconductor device with one or more field gate terminals for controlling the electric field in a drift region of the semiconductor device; and a feedback circuit configured to dynamically control a bias voltage or voltages applied to the field gate terminal or terminals, with different control voltages used for different semiconductor device characteristics in real-time in response to a time-varying signal at a further node in the circuit. |
| 申请公布号 |
US9515644(B2) |
申请公布日期 |
2016.12.06 |
| 申请号 |
US201414286418 |
申请日期 |
2014.05.23 |
| 申请人 |
NXP B.V. |
发明人 |
Dinh Viet Thanh;Hurxk Godefridus Antonius Maria;Vanhoucke Tony;Slotboom Jan Willem;Heringa Anco;Zahariev Ivan;Gridelet Evelyne |
| 分类号 |
H03F1/34;H03K17/10;H01L29/40;H01L29/732;H01L29/165;H01L29/737;H03F3/19;H03F3/21;G05F1/46 |
主分类号 |
H03F1/34 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A circuit, comprising:
a semiconductor device with one or more field gate terminals configured to control an electric field in a drift region of the semiconductor device, wherein the semiconductor device comprises a bipolar transistor having base, collector, and emitter terminals; and a feedback circuit configured to dynamically control one or more bias voltages applied to the one or more field gate terminals, with different control voltages used for different semiconductor device characteristics in real-time in response to a time-varying signal at the collector terminal. |
| 地址 |
Eindhoven NL |
