METHOD FOR FABRICATING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for fabricating a semiconductor device is provided to planarize an interlayer dielectric of a semiconductor substrate by eliminating the necessity of a conventional chemical mechanical polishing(CMP) process, and to simplify a planarization process of the interlayer dielectric by omitting a brush scrubbing process, a deionized water cleaning process and a sulfuric acid peroxide mixture(SPM) cleaning process. CONSTITUTION: A metal interconnection(20) is formed on the semiconductor substrate(10). An interlayer dielectric(30) of a multilayer structure is formed on the semiconductor substrate. Etchant(48) is injected to the interlayer dielectric through a nozzle while the semiconductor substrate is rotated, so that the interlayer dielectric is planarized.