| 摘要 |
PURPOSE: A method for depositing an insulation layer of a semiconductor device is provided to minimize powder generated in a deposition process by using oxide and nitride or oxide, oxynitride and nitride in a seasoning process instead of only nitride. CONSTITUTION: An insulation layer is deposited on a semiconductor substrate having an underlying structure. The semiconductor substrate with the deposited insulation layer is cleaned. A seasoning process is performed to change the atmosphere of a chamber to a deposition atmosphere. The seasoning process is performed in the atmosphere of oxide and nitride or in the atmosphere of oxide, oxynitride and nitride.
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