METHOD FOR FORMING CONTACT IN FABRICATION PROCESS OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for forming a contact in a fabrication process of a semiconductor device is provided to increase a margin of mis-alignment of the contact and reduce process errors by reducing a size of contact. CONSTITUTION: An interlayer dielectric(110) is formed on a semiconductor substrate(100). A polysilicon layer(112) and an anti-reflective layer are sequentially formed on the interlayer dielectric(110). The first mask pattern is formed on the anti-reflective layer. The second mask pattern is formed by etching the exposed anti-reflective layer. The third mask pattern is formed by adhering polymers on a sidewall of the second mask pattern. A contact hole is formed by etching the polysilicon layer(112) and the interlayer dielectric(110). The contact hole is filled with conductive materials.