| 发明名称 |
METHOD FOR FORMING CAPACITOR OF SEMICONDUCTOR DEVICE |
| 摘要 |
PURPOSE: A method for forming a capacitor of a semiconductor device is provided to be capable of restraining leakage current and preventing the deterioration of breakdown voltage characteristic. CONSTITUTION: A lower electrode(2) made of silicon is formed at the upper portion of a semiconductor substrate(1). A thin film type silicon nitride layer(3) is deposited on the entire surface of the lower electrode. An oxidation is carried out on the resultant structure for transforming the upper portion of the silicon nitride layer into a silicon nitride oxide layer(4). A dielectric layer(5) is deposited at the upper portion of the resultant structure. Then, an upper electrode(6) is formed at the upper portion of the dielectric layer.
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| 申请公布号 |
KR20040019512(A) |
申请公布日期 |
2004.03.06 |
| 申请号 |
KR20020051076 |
申请日期 |
2002.08.28 |
| 申请人 |
HYNIX SEMICONDUCTOR INC. |
发明人 |
LEE, TAE HYEOK;PARK, CHEOL HWAN;PARK, DONG SU;WOO, SANG HO |
| 分类号 |
H01L27/04;H01L21/28;H01L21/283;H01L21/314;H01L21/318;H01L21/82;H01L21/822;H01L21/8242;H01L27/10;H01L27/108;H01L29/72;H01L29/92;(IPC1-7):H01L27/04 |
主分类号 |
H01L27/04 |
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