| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a light emitting diode having a good temperature gradient, reliability, a luminance and a luminous efficiency. <P>SOLUTION: In the luminous diode made of a compound semiconductor, light is emitted from an active region of multiple quantum well structure and the active region is coated in the state of sandwich by upper and lower double layers of InGAlP and an upper clad layer whereby the improvement of the luminous efficiency increases the light beams in the light emitting diode thereby reinforcing an electronic reflection layer. The epi-layer of InGaAlP is formed on a thin GaAs substrate employing organic metal vapor phase epitaxy (OMVPE) and the good temperature gradient, reliability, the luminance and the luminous efficiency are improved by the substrate. <P>COPYRIGHT: (C)2004,JPO |
