POLYMER CONTAINING SILICON BASED COMPOUND FOR BI-LAYER PHOTORESIST AND METHOD FOR FORMING FINELY PHOTORESIST PATTERN WITHOUT COLLAPSE USING THE SAME

摘要

PURPOSE: A polymer containing silicon based compound and a method for forming a photoresist pattern using the same are provided to form finely the pattern without collapse by performing etching on a first photoresist layer for ArF using the photoresist pattern. CONSTITUTION: A polymer containing silicon based compound is satisfied with a predetermined chemical formula, wherein R is hydrogen or methyl, R1 is linear or branched chain alkylene of C3 to C10, and R2 to R4 are alkoxy radicals of C1 to C3. The silicon based compound is 3-(trimethoxysilyl)propyl methacrylate.