SEMICONDUCTOR DEVICE FABRICATING METHOD CAPABLE OF FORMING PHOTORESIST LAYER OF UNIFORM THICKNESS TO FORM PHOTORESIST PATTERN OF PROPER THICKNESS FUNCTIONING AS ETCH BARRIER LAYER

摘要

PURPOSE: A semiconductor device fabricating method capable of forming a photoresist layer of a uniform thickness is provided to form a photoresist pattern of a proper thickness functioning as an etch barrier layer by forming the photoresist layer without generating a defect while an underlying structure is planarized. CONSTITUTION: A layer to be etched is formed on a semiconductor substrate having an underlying structure(20). A hard mask layer is formed and planarized on the layer to be etched. Photoresist(PR) is applied to the surface of the hard mask layer to form a photoresist layer of a uniform thickness.