| 发明名称 |
Structure and method for formation of a blocked silicide resistor |
| 摘要 |
A process of forming a nitride film on a semiconductor substrate including exposing a surface of the substrate to a rapid thermal process to form the nitride film.
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| 申请公布号 |
US6853032(B2) |
申请公布日期 |
2005.02.08 |
| 申请号 |
US20030729379 |
申请日期 |
2003.12.08 |
| 申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
BALLANTINE ARNE W.;JOHNSON DONNA K.;MILES GLEN L. |
| 分类号 |
C23C16/42;H01L21/02;H01L21/28;H01L21/318;H01L21/331;H01L21/822;H01L21/8238;H01L27/04;H01L27/092;H01L29/73;H01L29/737;(IPC1-7):H01L31/119 |
主分类号 |
C23C16/42 |
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