Flash memory device

摘要

A flash memory device is disclosed. The flash memory device includes: a cell array region; an X-decoder region arranged adjacent to the cell array region in a first direction; a discharge transistor region disposed between the cell array region and the X-decoder region; a first metal line formed to pass through the X-decoder region, the discharge transistor region, and the cell array region, and arranged to extend in the first direction; and a second metal line including a first line patterns arranged parallel to the first metal line between the first metal lines, and a second line pattern interconnecting both ends of the first line patterns and extending in a second direction crossing the first direction.

主权项

1. A flash memory device comprising:
a cell array region; an X-decoder region arranged adjacent to the cell array region in a first direction; a discharge transistor region disposed between the cell array region and the X-decoder region; a first metal line formed to pass through the X-decoder region, the discharge transistor region, and the cell array region, and arranged to extend in the first direction; and a second metal line including first line patterns arranged parallel to the first metal line between the first metal lines, and a second line pattern interconnecting both ends of the first line patterns and extending in a second direction crossing the first direction.