| 摘要 |
A lateral junction field effect transistor includes a first gate electrode layer ( 18 A) arranged in a third semiconductor layer ( 13 ) between source/drain region layers ( 6, 8 ), having a lower surface extending on the second semiconductor layer ( 12 ), and doped with p-type impurities more heavily than the second semiconductor layer ( 12 ), and a second gate electrode layer ( 18 B) arranged in a fifth semiconductor layer ( 15 ) between the source/drain region layers ( 6, 8 ), having a lower surface extending on a fourth semiconductor layer ( 14 ), having substantially the same concentration of p-type impurities as the first gate electrode layer ( 18 A), and having the same potential as the first gate electrode layer ( 18 A). Thereby, the lateral junction field effect transistor has a structure, which can reduce an on-resistance while maintaining good breakdown voltage properties.
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