发明名称 |
Magnetic memory structure |
摘要 |
The invention includes a stacked magnetic memory structure. The magnetic memory structure includes a stacked magnetic memory structure. The first layer includes a first plurality of magnetic tunnel junctions. A second layer is formed adjacent to the first layer. The second layer includes a second plurality of magnetic tunnel junctions. The stacked magnetic memory structure further includes a common first group conductor connected to each of the first plurality of magnetic tunnel junctions and the second plurality of magnetic tunnel junctions.
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申请公布号 |
US6906941(B2) |
申请公布日期 |
2005.06.14 |
申请号 |
US20030624175 |
申请日期 |
2003.07.22 |
申请人 |
HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. |
发明人 |
TRAN LUNG;ANTHONY THOMAS C. |
分类号 |
G11C11/15;G11C11/16;(IPC1-7):G11C5/08 |
主分类号 |
G11C11/15 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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