发明名称 |
Diode structure for SOI circuits |
摘要 |
In an SOI diode structure, the conventional transistor-like MOS configuration is eliminated by replacing the polysilicon line by a completely dielectric region. This region may be used as an implantation mask to control a dopant gradient of a PN-junction that forms below the dielectric region. Moreover, during the salicide process, the dielectric region prevents the PN-junction from being shorted. Thus, a depletion of the active region caused by the MOS structure may be avoided. Therefore, the functioning of the PN-junction is maintained even for extremely thin semiconductor layers.
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申请公布号 |
US6905924(B2) |
申请公布日期 |
2005.06.14 |
申请号 |
US20030629436 |
申请日期 |
2003.07.29 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
BURBACH GERT;HORSTMANN MANFRED;FEUDEL THOMAS |
分类号 |
H01L29/861;H01L29/868;(IPC1-7):H01L21/823 |
主分类号 |
H01L29/861 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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