| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a film deposition system capable of depositing a thin film with a uniform film thickness distribution. <P>SOLUTION: The plasma CVD system 1 comprises a plurality of power devices 30a to 30d, and each of power devices 30a to 30d is connected to different feeding points 33a to 33d provided on the connecting face 4 of a shower head 20, respectively. Each power device 30a to 30d outputs high frequency voltage in which frequencies are the same and phases are mutually deviated by a plasma controller 32. By deviating the phases, the effective voltage charged from the power devices 30a to 30d is made equal, and plasma density between the shower head 20 and a substrate holder 19 is made uniform, thus the thickness of the film to be deposited on the surface of a substrate 15 is made uniform. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
